k·p Perturbation Model of the Three-terminal Ferromagnet-Insulator-Semiconductor Device with Spin-Orbit Interaction
Source Proceedings of the 34th Samahang Pisika ng Pilipinas Physics Congress, University of the Philippines Visayas, Iloilo City, 18–21 Aug 2016, SPP-2016-PA-17.
Although the creation of spin polarization in semiconductors in a three-terminal ferromagnet-insulator-normal conductor (3T-FIN) proved successful experimentally, the behavior of spin carriers are not yet well understood. Here we develop a model based on the k·p perturbation theory to provide an insight to the energy behavior of spin carriers in the semiconductor. A potential barrier and with a half-harmonic oscillator model was utilized. It was established that for the model potential, the spin-orbit interaction does not contribute to the additional energy in the 3T-FIN device for both polarized and unpolarized input.