@article {608,
	title = {Quantum anomalous Hall insulator phases in Fe-doped GaBi honeycomb},
	journal = {Chinese J. Phys.},
	volume = {67},
	year = {2020},
	pages = {246},
	abstract = {We discuss electronic and magnetic properties of the Fe-doped GaBi honeycomb using first principles calculations. Our analysis shows that the pristine GaBi honeycomb transitions from being a two-dimensional quantum spin Hall (QSH) insulator to a quantum anomalous Hall (QAH) insulator when it is doped with one Fe atom in a 4 {\texttimes} 4 GaBi honeycomb. The QAH phase in Fe-doped GaBi is found to be robust in that it maintains its Chern number (C = 1) under fairly large strains (\~{} 4\%) and supports a gap as large as 112~meV at 2.21\% strain. The QAH phase is also retained when the Fe-doped GaBi is placed on a CdTe substrate, suggesting that Fe-doped GaBi films could be useful for spintronics applications.},
	doi = {10.1016/j.cjph.2020.07.007},
	url = {https://www.sciencedirect.com/science/article/pii/S0577907320301866},
	author = {Zhi-Quan Huang and Chia-Hsiu Hsu and Christian P. Crisostomo and Gennevieve Macam and Jing-Rong Su and Hsin Lin and Arun Bansil and Feng-Chuan Chuang}
}
@article {612,
	title = {Prediction of quantum anomalous hall effect in MBi and MSb (M: Ti, Zr, and Hf) honeycombs},
	journal = {Nanoscale Res. Lett.},
	volume = {13},
	year = {2018},
	pages = {43},
	abstract = {The abounding possibilities of discovering novel materials has driven enhanced research effort in the field of materials physics. Only recently, the quantum anomalous hall effect (QAHE) was realized in magnetic topological insulators (TIs) albeit existing at extremely low temperatures. Here, we predict that MPn (M =Ti, Zr, and Hf; Pn =Sb and Bi) honeycombs are capable of possessing QAH insulating phases based on first-principles electronic structure calculations. We found that HfBi, HfSb, TiBi, and TiSb honeycomb systems possess QAHE with the largest band gap of 15 meV under the effect of tensile strain. In low-buckled HfBi honeycomb, we demonstrated the change of Chern number with increasing lattice constant. The band crossings occurred at low symmetry points. We also found that by varying the buckling distance we can induce a phase transition such that the band crossing between two Hf d-orbitals occurs along high-symmetry point K2. Moreover, edge states are demonstrated in buckled HfBi zigzag nanoribbons. This study contributes additional novel materials to the current pool of predicted QAH insulators which have promising applications in spintronics.},
	doi = {10.1186/s11671-017-2424-y},
	author = {Zhi-Quan Huang and Wei-Chih Chen and Gennevieve M. Macam and Christian P. Crisostomo and Shin-Ming Huang and Rong-Bin Chen and Marvin A. Albao and Der-Jun Jang and Hsin Lin and Feng-Chuan Chuang}
}
