@article {701,
	title = {Electronic, magnetic, and topological properties of ferromagnetic 2D perovskite-type oxides},
	journal = {New J. Phys.},
	volume = {26},
	year = {2024},
	pages = {123031},
	abstract = {Two-dimensional (2D) materials within the hematene-type binary oxides and perovskites family have recently gathered huge research interest for nanoelectronic devices. However, the exploration of their fascinating topological properties remains limited. Herein, through first-principles calculations, we systematically examine the electronic, magnetic, and topological properties of substitutionally doped 2D ABO$_{3}$ (A = As, Sb, or Bi, and B = V, Nb, or Ta) perovskite structures at the B site of a B$_{2}$O$_{3}$ system. Interestingly, the atomic substitution makes the 2D ABO$_{3}$ structures dynamically stable. Our detailed calculations show the ferromagnetic (FM) and antiferromagnetic phases of these materials. The calculated Chern number (C) for the FM 2D ABO$_{3}$ (A = As, Sb, or Bi, B = Nb or Ta) suggests their topologically non-trivial phases. Furthermore, the computed nontrivial Berry curvature highlights the topological properties in AsNbO$_{3}$. These findings highlight opportunities in 2D-ABO$_{3}$ materials, for applications in spintronics.},
	doi = {10.1088/1367-2630/ad9be0},
	author = {Susaiammal Arokiasamy and Gennevieve M. Macam and Puthiya Covilakam Sreeparvathy and Rovi Angelo B. Villaos and Zhi-Quan Huang and Chia-Hsiu Hsu and Yoshinori Okada and Hsin Lin and Feng-Chuan Chuang}
}