@article {R{\"o}mer2003167,
	title = {Thermoelectric properties of disordered systems},
	journal = {J. Phys. Soc. Jpn. Suppl. A},
	volume = {72},
	number = {SUPPL. A},
	year = {2003},
	pages = {167-168},
	abstract = {<div>The electronic properties of disordered systems have been the subject of intense study for several decades. Thermoelectric properties, such as thermopower and thermal conductivity, have been relatively neglected. A long standing problem is represented by the sign of the thermoelectric power. In crystalline semiconductors this is related to the sign of the majority carriers, but in non-crystalline systems it is commonly observed to change sign at low temperatures. In spite of its apparent universality this change has been interpreted in a variety of ways in different systems. We have developed a Green{\textquoteright}s function recursion algorithm based on the Chester-Thelling-Kubo-Greenwood formula for calculating the kinetic coefficients on long strips or bars. From these we can deduce the electrical conductivity, the Seebeck and Peltier coefficients and the thermal conductivity, as well as the Lorenz number. We present initial results for 1D systems. We observe a Lorentzian distribution for the thermopower which is modified by the presence of inelastic scattering. This could give rise to non-negligible quantum fluctuations in macroscopic systems at low temperatures.</div>},
	doi = {10.1143/JPSJS.72SA.167},
	author = {Rudolf A R{\"o}mer and Angus MacKinnon and Cristine Villagonzalo}
}
@article {Villagonzalo200016446,
	title = {Behavior of the thermopower in amorphous materials at the metal-insulator transition},
	journal = {Phys. Rev. B},
	volume = {62},
	number = {24},
	year = {2000},
	note = {cited By 4},
	pages = {16446-16452},
	abstract = {<div>We study the behavior of the thermal transport properties in three-dimensional disordered systems close to the metal-insulator transition within linear response. Using a suitable form for the energy-dependent conductivity σ, we show that the value of the dynamical scaling exponent for noninteracting disordered systems such as the Anderson model of localization can be reproduced. Furthermore, the values of the thermopower <em>S</em> have the right order of magnitude close to the transition as compared to the experimental results. A sign change in the thermoelectric power <em>S</em> {\textemdash} as is often observed in experiments {\textemdash} can also be modeled within the linear response formulation using modified experimental σ data as input.</div>},
	doi = {10.1103/PhysRevB.62.16446},
	author = {Cristine Villagonzalo and Rudolf A R{\"o}mer and Michael Schreiber and Angus MacKinnon}
}
@article {Villagonzalo1999179,
	title = {Thermoelectric transport properties in disordered systems near the Anderson transition},
	journal = {Eur. Phys. J. B},
	volume = {12},
	number = {2},
	year = {1999},
	note = {cited By 12},
	pages = {179-189},
	abstract = {<div>We study the thermoelectric transport properties in the three-dimensional Anderson model of localization near the metal-insulator transition (MIT). In particular, we investigate the dependence of the thermoelectric power <em>S</em>, the thermal conductivity <em>K</em>, and the Lorenz number <em>L</em>0 on temperature <em>T</em>. We first calculate the <em>T</em> dependence of the chemical potential μ from the number density <em>n</em> of electrons at the MIT using an averaged density of states obtained by diagonalization. Without any additional approximation, we determine from the behavior of <em>S</em>, <em>K</em> and <em>L</em>0 at low <em>T</em> as the MIT is approached. We find that the d.c. conductivity and <em>K</em> decrease to zero at the MIT as <em>T</em> -\&gt; 0 and show that <em>S</em> does not diverge. Both <em>S</em> and <em>L</em>0 become temperature independent at the MIT and depend only on the critical behavior of the conductivity.</div>},
	doi = {10.1007/s100510050994},
	author = {Cristine Villagonzalo and Rudolf A R{\"o}mer and Michael Schreiber}
}
@article {Villagonzalo1998394,
	title = {Low temperature behavior of the thermopower in disordered systems near the Anderson transition},
	journal = {Ann. Phys. (Leipzig)},
	volume = {7},
	number = {5-6},
	year = {1998},
	note = {cited By 5},
	pages = {394-399},
	abstract = {<div>We investigate the behavior of the thermoelectric power <em>S</em> in disordered systems close to the Anderson-type metal-insulator transition (MIT) at low temperatures. In the literature, we find contradictory results for <em>S</em>. It is either argued to diverge or to remain a constant as the MIT is approached. To resolve this dilemma, we calculate the number density of electrons at the MIT in disordered systems using an averaged density of states obtained by diagonalizing the three-dimensional Anderson model of localization. From the number density we obtain the temperature dependence of the chemical potential necessary to solve for <em>S</em>. Without any additional approximation, we use the Chester-Thellung-Kubo-Greenwood formulation and numerically obtain the behavior of <em>S</em> at low <em>T</em> as the Anderson transition is approached from the metallic side. We show that indeed <em>S</em> does not diverge.</div>},
	doi = {10.1002/(SICI)1521-3889(199811)7:5/6<394::AID-ANDP394>3.0.CO;2-Q},
	author = {Cristine Villagonzalo and Rudolf A R{\"o}mer}
}