@article {607,
	title = {Tuning topological phases and electronic properties of monolayer ternary transition metal chalcogenides (ABX$_{4}$, A/B = Zr, Hf, or Ti; X = S, Se, or Te)},
	journal = {Appl. Phys. Lett.},
	volume = {118},
	year = {2021},
	pages = {111901},
	abstract = {Topological materials are very promising materials for technological applications ranging from spintronics to quantum computation. Here, based on first-principles calculations, we predict a family of two-dimensional (2D) topological materials in nine ternary transition metal chalcogenides (TTMCs) ABX$_{4}$, where A/B = Zr, Hf, or Ti and X = S, Se, or Te. A total of three compounds (ZrTiTe$_{4}$, HfZrTe$_{4}$, and HfTiTe$_{4}$) are identified to be nontrivial within a hybrid functional calculation. The nontrivial phase originated from the p-d band inversion at the Г point with spin-orbit coupling. The structural stability of these monolayers is confirmed by phonon spectrum analysis, showing no negative phonon frequencies. The diversity of TTMCs will open a wide possibility for tuning the bandgap and will provide a variety of opportunities for 2D and topological materials research.},
	doi = {10.1063/5.0036838},
	author = {Gennevieve M. Macam and Ali Sufyan and Zhi-Quan Huang and Chia-Hsiu Hsu and Shin-Ming Huang and Hsin Lin and Feng-Chuan Chuang}
}