Effect of varying the atomic bond stiffness in the heat baths to the thermal conductance of a graphene junction

We simulate ballistic thermal transport due to phonons in a graphene junction by letting it interact with heat baths located at its edges and thereby exposing it to a temperature gradient. The bond stretching force constant for the left (L, heat source), central (C, graphene junction) and right (R, heat sink) regions should ideally be the same since they are all made out of graphene with interactions described by the same interatomic potential.