k·p Perturbation Model of the Three-terminal Ferromagnet-Insulator-Semiconductor Device with Spin-Orbit Interaction

Although the creation of spin polarization in semiconductors in a three-terminal ferromagnet-insulator-normal conductor (3T-FIN) proved successful experimentally, the behavior of spin carriers are not yet well understood. Here we develop a model based on the k·p perturbation theory to provide an insight to the energy behavior of spin carriers in the semiconductor. A potential barrier and with a half-harmonic oscillator model was utilized.