Electric field and spin precession effects on spin injection to semiconductors in three-terminal ferromagnet-insulator-nonmagnetic junctions

<div>The application of an electric field and the ensuing spin precession due to internal magnetic fields in the semiconductor of a three-terminal (3T) device is investigated using the standard diffusion theory. Because the externally applied current is confined in one direction in such a device, the effective electric field is assumed to be significant. The dominant precession direction that dictates the spin dynamics is perpendicular to both the injected spins and the electric field.